IMECãããæ°å¹Žãå¿çšãæèããç ç©¶ãå ãããã®èŠæš¡ãæ¡å€§ãã€ã€ãããåœåç ç©¶ããŠããåå°äœããã»ã¹ã¯ãå 端ã§ã¯32nmãŸã§åŸ®çްåããŠãããããåŸæ¥ã®ã¹ã±ãŒãªã³ã°åã«åŸãæè¡ããããšã¬ã¯ãããã¯ã¹ãšããåç§°ã§ãããããã«è¿œåãããæ°ããªå¿çšã¯ãç°å¢ãæèããåéãé«éœ¢å瀟äŒã«åãããã«ã¹ã±ã¢é¢ä¿ã«å°œããããšèšã£ãŠããã
åŸæ¥ã®å»¶é·æè¡ã«å¯ŸããŠãIMECã¯ãã1ã€ã®ããŒãã§ããMore than MooreãCMOSãããŒã¹ã«ããããšãããCMOREãç ç©¶ãšåä»ããCMOSåè·¯ãšMEMSãå ãã£ãã¯ã¿ãååŠã»ã³ãµããã€ãªã€ã³ã¿ãã§ãŒã¹ã枩床ã»ã³ãµããã€ã¯ããã©ãŒãªã©ãšã®éç©åãããã«é²ããããããã¯GaN on SiãTSVã«ãã3次å å®è£ ããªã©åçŽãªåŸ®çްåã ãã§ã¯ãªã倿©èœåè·¯ãç ç©¶ããã
10æ6æ¥ã«IMECãšTSMCãMEMSã§ååãšãããã¥ãŒã¹ãæ¥åå·¥æ¥æ°èã«ãŠå ±ãããããããã®å ±éã¯æ£ãããªããå®ã¯MEMSã§äž¡ç€Ÿãååããããšã¯ä»¥åããäŒããããŠãããä»åã¯ãCMOREæè¡ã§ååãããªãã¡å€æ©èœåè·¯ãCMOS ICãš1ã€ã®ããã±ãŒãžã«éç©ããæè¡ã§ååãããSoCãšãããããSiPã«ãã1ããã±ãŒãžåããæè¡ããã®ææºã®èã§ãããSiGeã®MEMSãTSVãWLPãããã«ã¯ãã¹ããä¿¡é Œæ§è©Šéšãªã©ã察象ãšãªãã
ç°å¢ããŒããšããŠã®å€ªéœå çºé»
IMECãåãçµãç°å¢ã®ããŒãã«ã¯ã倪éœå çºé»ããã°ãªãŒã³ç¡ç·ãªã©ãããã倪éœå çºé»ã«ã¯Siçµæ¶ç³»ãææ©ææç³»ãªã©ãæ€èšãããSiçµæ¶ã«é¢ããŠã¯ãŠã§ããèãããªããå¹çãäžããããšã§ç°å¢è² è·ãæžããæ¹åã®ç ç©¶ãå§ããŠãããçŸåšã¯120ÎŒmçšåºŠã ããããã80ÎŒmãããã«ã¯40ÎŒmãžãšæžãããŠããã80ÎŒmãŸã§ã¯çŸç¶ã®ãã€ã·ã³ã°æè¡ã極ããããšã«ãªããã40ÎŒmã¯è¡šé¢ããåœè©²æ·±ãã®é¢ã«äœããã®ããº(ã€ãªã³æ³šå ¥ãªã©)ãä»ããŠããã«ããšã¯ããããããªæ¹æ³(Layer transition process)ãå°å ¥ããããšã§å®çŸã§ãããšç ç©¶è ã¯èããŠããã
ããã«èãããå Žåã¯ããšãã¿ãã·ã£ã«æé·ãäœã³ã¹ãã«å®çŸã§ããæ¹æ³ãéçºããããã¬ã©ã¹äžã«Siã®çš®å±€ã圢æããæè¡ãéçºããããããããçµã¿åããããªã©ã®æ¹æ³ã䜿ãã
ææ©ææã䜿ã倪éœé»æ± ã®ç ç©¶ãå§ããŠããããã¡ãã¯ããšããšèããããå¹çãäžãããå®å®æ§ãä¿¡é Œæ§ãäžããããããŠå€§é¢ç©åã課é¡ãšãªã£ãŠããããããã®ç ç©¶ãé²ãããããã·ãŒãã»ããŒã»ã·ãŒãæ¹åŒã§å€ªéœé»æ± ã詊äœãã補é 詊äœã©ã€ã³ãäœã£ããã¹ãã¬ã€ã³ãŒã¿ãã€ã³ã¯ãžã§ããããªã³ã¿ãã¹ã¯ãªãŒã³å°å·æ©ããã¬ãŒãã³ãŒã¿ãªã©ãã©ã€ã³ã«èšçœ®ããŠããã
倪éœé»æ± ã®å¹çãåäžãããã¢ã€ãã¢ãããã€ããããShockley, W. and Queisserã®åäžæ¥åã®çè«éçã§ããå¹ç31%ãè¶ ãããããªããŸããŸãªæè¡ãææ¡ãããŠãããææãã®ãã®ãããã¹ã±ãŒã«ããéçºãããªãã¡å€ééåäºæžæ§é ãããããã£ãªã€å©çšããã³ãéæºäœãå©çšããæ¹æ³ãªã©ãçµã¿åãããã°çè«çã«ã¯æå€§87%ãŸã§å¹çãäžãããããšããã
äœæ¶è²»é»åå®çŸã«åãããœãããŠã§ã¢ç¡ç·æè¡
ã°ãªãŒã³ç¡ç·ãšã¯ãäœæ¶è²»é»åã§é»åããããã䜿ã補é è² æ ãåããããœãããŠã§ã¢ç¡ç·ãå©çšããç¡ç·éä¿¡æè¡ãæããŠããããœãããŠã§ã¢ã§ãããããªç¡ç·æ¹åŒã«å¯Ÿå¿ã§ããåæ¹åŒã¯1ãããã§ã§ããæ¹åŒããšã«ããããèµ·ããå¿ èŠããªãããã補é è² æ ã軜æžã§ãããCO2ãåæžãããããžã§ã¯ãã«ã¯è£œé ãšãã«ã®ãŒã®åæžãå«ãŸããèš³ã§ããã
åç¡ç·æ¹åŒã®ããŒã¹ãã³ããããããScalable radio(SCALDIO)ããšåä»ãã2007幎ããã³2009幎ã®ISSCC(åœéåºäœåè·¯äŒè°)ã«ãããŠãªã³ã³ãã£ã®ã¥ã¢ã©ãã«ãªåä¿¡ããããšããŠçºè¡šããŠãããçŸåšéçºäžã®ãªã³ã³ãã£ã®ã¥ã¢ã©ãã«ãã©ã³ã·ãŒã(éåä¿¡æ©)ã¯40nmã®CMOSããã»ã¹ã§èšèšããè©äŸ¡äžãæåã®3GPP-LTEãã¬ãã·ãã«ãªRFèŠæ±ã«å¿ããããããããšãªãã
åç¡ç·ã«ã»ã³ã·ã³ã°ãšå€æã®åè·¯ãè¿œå æèŒãããšã³ã°ããã£ãç¡ç·ã«ãªããã³ã°ããã£ãç¡ç·ã¯äŸãã°ãæºåž¯é»è©±ã®é»æ³¢ãæ··ãã§ããŠéããªãå Žåã«ã¯ã空ããŠããåºå°å±ãæ¢ãèªåçã«ãã®å±ã«ã€ãªããŠããŸãæè¡ã ãããã€ãã®éä¿¡æ¹åŒã䞊åã«æšæºåãããŠäœåããŠããŠãããã«4Gæä»£ã®LTEãLTE-Advancedãªã©ã«å¯Ÿå¿ããŠãããšããåæã§ããããã®ããã®å°çšããã»ããµãADRES(architecture for dynamically reconfigurable embedded systems)ããéçºããã«ãã¹ã¬ããæ¹åŒã®ã¢ãŒããã¯ãã£ãæ¡çšããŠãããåæ§æå¯èœãªããã«ãã¬ãã·ãã«ãªãã©ãããã©ãŒã ãæ³å®ããŠããããã®ããã»ããµã®åºæ¬çãªèãã¯ãåæ§æã§ããããã«ç²åºŠã®ç²ãå°ããªããã»ããµã¢ã¬ã€ã«æ©èœããããã³ã°ãããã«ãã¹ã¬ããåäœã¯VLIWã¢ãŒããã¯ãã£ã®ãã¥ã¢ã«ã³ã¢ãåãæã€ããšã§ãæ§èœåäžãšãã¬ãã·ããªãã£ãäž¡ç«ãããŠããã
å¥åº·é¢ä¿ã®ç ç©¶ãšããŠã¯2ã€ããã1ã€ã¯BAN(ããã£ãšãªã¢ãããã¯ãŒã¯)ã§ããããã1ã€ã¯è³ã®æŽ»åç¶æ ã調ã¹ãç ç©¶ã ãBANã¯ããããã®é«éœ¢å瀟äŒã«å¯ŸããŠãç æ°ãæ©æçºèŠã»æ©æäºé²ãè¡ãããã®äœæž©ã»å¿æã»è¡å§ãªã©ã®24æé枬å®ãšããŒã¿ãã°ãæ¡ãã·ã¹ãã ã«äœ¿ãããã¬ãã·ãã«ããªã³ãåºæ¿ã«ã»ã³ãµãèšæž¬ããããã®äœæ¶è²»é»åãã€ã³ã³ãéä¿¡æ©ãæèŒããããã人äœã«åŒµãä»ããããã®ããŒã¿ã24æé枬å®ããæçµçã«ç é¢ã«éããšãããã®ãæ°å€ã®æå€§ã»æå°ã®ç¯å²ã«24æéå ¥ã£ãŠãããã©ããããã§ãã¯ããããšã§ç æ°ã®æ©æçºèŠãã§ããã
è³ã®æŽ»åç¶æ ã¯ãäŸãã°ç¡ç ç°åžžãæ©æã«çºèŠããããã¹ãã¬ã¹ã®ç¶æ ãç¥ãããšã§ç²Ÿç¥ç ã®æ²»çã«åœ¹ç«ãŠãããšãããã®ããã®ä»ãç¥çµçްèãéç©åè·¯ã®äžã«åã蟌ã詊ã¿ã黿°åºæ¿ã«å¯Ÿãããã¥ãŒãã³ã®åããªã©ãè§£æããç ç©¶ãææããŠããã



